Nd:YAG + V:YAG Bonding Crystal
Size: 2.8*2.8*14.2mm; Nd:YAG:10mm; V:YAG:4.2mm, T0=75%@1319nm;
Nd:YAG Surface: R <1% @808±5nm & R > 99.9% @1319±1nm & R<10% @1064±1nm ,AOI=0±5°;
V:YAG Surface: R=85%±2% @1319±1nm & R<10% @1064±1nm, AOI=0±5°; Damage Threshold＞700MW /cm2@10ns, 10Hz, 1319nm;
V:YAG crystal case (2)
Size: 3*3*0.9mm
T0=80%
α=2.467@1340nm
Material Processing
1064nm laser
- Laser plotter
- Laser Range Finder
- Laser cutting machine
V:YAG crystal is a new material of laser saturable absorber and passive Q-switch in wavelength range of 1.06μm-1.44 μ m. It is especially suitable for neodymium laser of 1. 3 μ m. It is an excellent saturable absorber material in wave band of 1300nm.There are four chemical values of V element: + 2, + 3, + 4 and + 5. The V3 + ions with + 3 valence are commonly used Q-switch and saturable absorbent ions, which are doped into YAG matrix crystals to realize the passive Q-switch and mode-locking of laser. In the passively Q-switch solid-state laser, the laser has the advantages of good stability, long lifetime, miniaturization, simplicity and practicality.
- Long upper level life
- Excited state absorption
- High saturation at 1.3μm
- High damage threshold
- Short recovery time
| Passive V:YAG Q-Switching Operation of 1.34-μm Nd:YAG Laser with Loop Cavity (IEEE) |
| V:YAG saturable absorber as a Q-switch for diode-pumped Nd:YAG-lasers at 1.44 μm and 1.34 μm 228 / CLEO 2000 / TUESDAY AFTERNOON |
| Passlvely Q-Swltched and modelocked Nd:YVO/sub 4/ laser at 1.34/spl mu/m by V:YAG saturable absorber WEDNESDAY AFTERNOON / CLEO 2001 / 285 |
| Diode-pumped passively Q-switched Yb:KGW laser with V:YAG saturable absorber Tuesday I 104 |
If you can’t find the Literature you want, Contact us to get the PDF Get the Literature
| V:YAG as passive Q-switch at 1342 nm and 1064 nm TUESDAY AFTERNOON / CLEO’98 / 181 |
| Nd:YAG/V:YAG monolithic microchip laser operating at 1.3 µm J. Šulc et al. / Optical Materials 30 (2007) 50–53 |
| The influence of thermal lens effect on pulse repetition rate in diode-pumped passively Q-switched Nd:GdVO4/V:YAG laser X. Li et al. / Optics & Laser Technology 44 (2012) 929–934 |
| Passively Q-switched Nd:GYSGG laser operating at 1.3 μm with V:YAG as saturable absorber T. Song et al. / Optik 127 (2016) 10621–10625 |
| LD-pumped passively Q-switched Nd:YVO4/LBO red laser with V:YAG Qing-hua Xue et al. / Optics & Laser Technology 38 (2006) 540–543 |
| Diode-pumped passively Q-switched Nd:LuxY1−xVO4 laser at 1.34 μm with two V:YAG saturable absorbers X. Li et al. / Optics Communications 284 (2011) 1307–1311 |
| Investigation of passively synchronized dual-wavelength Q-switched lasers based on V:YAG saturable absorber J. Janousek et al. / Optics Communications 265 (2006) 277–282 |
| Characteristics and optical spectra of V:YAG crystal grown in reducing atmosphere D. Zhang et al. / Journal of Crystal Growth 294 (2006) 437–441 |
| The characteristics of passively Q-switched and mode-locked 1.06 μm Nd:GdVO4 laser with V:YAG saturable absorber J.-L. Xu et al. / Optical Materials 32 (2010) 522–525 |
| Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber J. Ma et al. / Optics Communications 282 (2009) 958–961 |
| Passively Q-Switched 1.32-mm Nd:YAG Laser with a V:YAG Saturable Absorber ISSN 1054-660X, Laser Physics, 2008, Vol. 18, No. 4, pp. 393–395. |
| Passive Q-switching of 1.44 µm and 1.34 µm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber Appl. Phys. B 76, 245–247 (2003) |
| V:YAG – a new passive Q-switch for diode-pumped solid-state lasers Appl. Phys. B 67, 555–558 (1998) |
| 1.3-μm passive Q-switching of a Nd-doped mixed vanadate bounce laser in combination with a V:YAG saturable absorber Appl Phys B (2010) 101: 65–70 |
V:YAG crystals crylink have supplied
| T0 | Size (mm) | Coating |
| 3x3x0.43 | AR/AR@1340nm | |
| 2.85×2.85×0.8 | ||
| 75% | 5x5x4.275 | |
| 80% | 2.8x3x7.75 | |
| 5x5x3.31 | ||
| 85% | 2.01x3x7.32 | |
| 5x5x2.41 | ||
| 90% | 1.31x3x6.93 | |
| 5x5x1.516 |
Size: 5x5x4.275 mm
T0=75%
Size: 5x5x4.275 mm
T0=75%
Size: 5x5x4.275 mm
T0=75%
Size: 2.85×2.85×0.8 mm
Size: 5x5x1.516 mm
T0=90%
Size: 1.31x3x6.93 mm
T0=90%
Size: 3x3x0.43
Coating: AR/AR@1340nm
Size: 5x5x3.31
T0=80%
Size: 5x5x3.31
T0=80%
Size: 2.01x3x7.32 mm
T0=85%
Size: 2.8x3x7.75 mm
T0=80%
Size: 2.8x3x7.75 mm
T0=80%
Size: 5x5x1.516 mm
T0=90%
Size: 5x5x2.41 mm
T0=85%
Size: 5x5x2.41 mm
T0=85%
Parameter
| Property | Value |
| Chemical Formula | V3+:Y3Al5O12 |
| Crystal structure | cubic – la3d |
| Orientation | <100> <+/-0.5° |
| Transmittance | 30%-97% |
| Optical density | 0.1-0.8 |
| Atomic transition structure | Two-level system |
| Recovery time | 5~22 ×10-22 s |
| Concentrations | (0.05~0.35) wt% |
| Ground-state absorption cross-section | 7.2 x 10-18 cm2 |
| Excited-state absorption cross-section | 7.4 x 10-19 cm2 |
| Emission bandwidth | 1000-1450 nm |
| Central absorption wavelength | 1300 nm |
| Coatings | Standard coating is AR with R |
| < 0.2%(@1340 nm) | |
| Absorption coefficient | 1.0cm-1 – 7.0cm-1 |
| Damage threshold | >500MW/cm2 |
| Property | Value |
| Orientation Tolerence | < 0.5° |
| Thickness/Diameter Tolerance | ±0.05 mm |
| Surface Flatness | <λ/8@632 nm |
| Wavefront Distortion | <λ/4@632 nm |
| Surface Quality | 10/5 |
| Parallel | 30〞 |
| Perpendicular | 15ˊ |
| Clear Aperture | >90% |
| Chamfer | <0.2×45° |
| HR coating | <= 0.2% (@ 1340nm) |
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| V YAG absorption spectrum 1 | V YAG emission spectrum |
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| V YAG absorption-spectrum 2 |
