532nm green laser marking machine has a high electro-optical conversion rate over 30%~45%, low power consumption, and is developed by the world’s most advanced side or end pump technology at 532nm wavelength. Customers can choice their own pump type according to their demands. It is used for a wide range of applications, such as marking non-metallic materials, marking metallic materials, marking or calibrating optics, and perforating ceramic materials. In the same kind of products, the precision is higher.
Theotry
M1、M2 mirror——The inside of the M2 output mirror is coated with a film layer, which is reversed at 1064 nm and increases the transmittance at 532 nm.
A-Q——Continuous laser is modulated into lasers with different frequencies, high peak power, narrow pulse width and high repetition rate.
When the laser acts on the material to be processed, interaction process is mainly related to the power density of the laser, the action time, the material properties, and the wavelength of the laser etc. While the wavelength of 532nm green laser output is focused, the spot diameter is smaller, the energy is more concentrated, the electro-optical conversion efficiency is high, the beam quality is good, the marking accuracy is below 10μm, the marking frame is neat, no explosion point, no thermal deformation.
- Electro-optic conversion rate is high
- Low power consumption
- High precision
- Small spot diameter
- Good beam quality
- Energy concentration
- IC Chip Marking
The 532nm laser output from the green laser marking machine can be absorbed by almost all materials, the beam quality is good, the processing line is thin, and the marking quality is good. Due to IC area is small,there should be high accuracy while marking IC chip.The green laser has high precision characteristics, which is suitable for marking on the IC chip.
- Multiphoton Micro-ablation
Multiphoton micro-ablation on the surfaces of transparent materials. Single pulse ablation is obtained with pulses at 532nm. There are micron-size holes and channels engraved on in borosilicate glass, ion-doped waveguides and thermoplastic elastomer. Resulting microchannels are smooth and zones affected by thermal effects is very small.
- Laser Welding Of Plastics
There are many advantages in laser welding,such as high deposited energy, non-contact.In welding process,the laser light is easy to control and easy to automate.
532nm Laser
Microchip Laser
532nm 550ps Microchip Laser System of MCB Series
MCB series microchip laser products have very ideal narrow pulse width, but also can achieve high single pulse energy. The product is a passive Q-switched solid-state laser based on semiconductor pump. The laser pulse is pure and tailless, the single pulse energy is stable, and the beam quality is good. The integrated design of semiconductor pump module and laser crystal makes the compact laser head easy to install and integrate. The system supports internal and external triggering. This series of products include four wavelengths of 1064nm, 532nm, 355nm and 266nm. The full sealing module inside the laser head can be used by customers for secondary development and application. The superior product performance index makes its application range very wide, especially in laser measurement, which can meet many different kinds of measurement needs, and also has excellent performance in the application of laser seeds.
Model | Repetition Frequency (kHz) | Average Power (mW) | Output Energy (uJ) | Pulse Width (ps) |
CL532-100Hz-80μJ-MCB007 | 0.1 | 8 | 80 | 500 |
CL532-100Hz-180μJ-MCB008 | 0.1 | 18 | 180 | 500 |
CL532-1KHz-70μJ-MCB009 | 1 | 70 | 180 | 500 |
- Pulse width up to 500ps
- Pulse energy up to 170μJ
- External pump source fiber pump pulse
- Charge energy up to 360μJ
- Maximum repetition frequency up to 1kHz
- Beam mode is TEM00
- Fully sealed design, high reliability
- Seed source
- Micromachining
- Biomedical Science
- Laser ultrasonic inspection
- Laser ionization mass spectrometry
- Non-linear optical measurement
- Laser-induced fluorescence
- Laser induced breakdown spectroscopy
532nm 750ps Microchip Laser System of MCC Series
MCC series microchip laser products have very ideal narrow pulse width, but also can achieve high single pulse energy. The product is a passive Q-switched solid-state laser based on semiconductor pump. The laser pulse is pure and tailless, the single pulse energy is stable, and the beam quality is good. The integrated design of semiconductor pump module and laser crystal makes the compact laser head easy to install and integrate. The system supports internal and external triggering. This series of products include four wavelengths of 1064nm, 532nm, 355nm and 266nm. The full sealing module inside the laser head can be used by customers for secondary development and application. The superior product performance index makes its application range very wide, especially in laser measurement, which can meet many different kinds of measurement needs, and also has excellent performance in the application of laser seeds. We can also provide 1064nm and 532nm isolators.
Model | Repetition Frequency (kHz) | Average Power (mW) | Output Energy (uJ) | Pulse Width (ps) |
CL532-100Hz-250μJ-MCC010 | 0.1 | 25 | 250 | 700 |
CL532-500Hz-150μJ-MCC011 | 0.5 | 75 | 150 | 700 |
CL532-1KHz-40μJ-MCC012 | 1 | 40 | 40 | 700 |
CL532-5KHz-35μJ-MCC013 | 5 | 175 | 35 | 700 |
CL532-10KHz-20μJ-MCC014 | 10 | 200 | 20 | 700 |
- Pulse width up to 700ps
- Pulse energy up to 80 μJ
- External pump source fiber pump pulse energy can reach 500μJ
- Repetition frequency up to 10kHz
- Beam mode is TEM00
- Fully sealed design, high reliability
- Seed source
- Micromachining
- Laser ionization mass spectrometry
- Laser ultrasonic inspection
- Optical Parametric Oscillating Pump Source
- Biomedical Science
- Laser-induced fluorescence
- Laser induced breakdown spectroscopy
532nm 350ps Microchip Laser System of MCD Series
MCD series microchip laser is a passively Q-switched solid-state laser based on semiconductor pump. The laser pulse is pure and tailless, the single pulse energy is stable, and the beam quality is good. The integrated design of semiconductor pump module and laser crystal makes the compact laser head easy to install and integrate. The system supports internal and external triggering. This series of products include four wavelengths of 1064nm, 532nm, 355nm and 266nm. The full sealing module inside the laser head can be used by customers for secondary development and application. This series of lasers have great advantages in seed light, laser micromachining, laser measurement and other applications. We also provide 1064nm and 532nm isolators.
Model | Repetition Frequency (kHz) | Average Power (mW) | Output Energy (uJ) | Pulse Width (ps) |
CL532-100Hz-75μJ-MCD009 | 0.1 | 7.5 | 75 | 300 |
CL532-100Hz-250μJ-MCD010 | 0.1 | 25 | 250 | 300 |
CL532-500Hz-65μJ-MCD011 | 0.5 | 32 | 65 | 300 |
CL532-1KHz-50μJ-MCD012 | 1 | 50 | 50 | 300 |
- Pulse width up to 300ps
- Pulse energy up to 150 μJ
- External pump source fiber pump pulse energy can reach 360μJ
- Maximum repetition frequency up to 1kHz
- Beam mode is TEM00
- Fully sealed design, high reliability
- Seed source
- Laser micromachining
- Non-linear optical measurement
- Laser-induced fluorescence
- Laser ionization mass spectrometry
- Fluorescence lifetime measurement
Q-Switched Laser
This series of products include active Q-switching and passive Q-switching microchip two technical solutions to generate sub nanosecond optical pulses, output sub nanosecond laser pulses while maintaining excellent beam quality. For the active Q-switched technology, the jitter of the output optical signal and the trigger signal is less than 1 ns, and for the passive Q-switched microchip laser, the jitter of the output signal and the external trigger signal is less than 10 μ s. The laser can be used alone or as seed source of laser amplifier. At the same time, the laser amplifier of our company can be used to amplify the energy to tens of MJ. At the same time, the wavelength can be extended to 532nm, 355nm, 266nm, etc. The product has the advantages of good beam quality, high peak power, reliable performance, compact structure, simple operation and maintenance. Combined with excellent production technology, this series of products can meet the requirements of airborne, vehicle mounted, high and low temperature and other harsh environments.
Main features of this series of lasers:Sub-nanosecond, high peak power;High beam quality;High stability and compact structure;Strong environmental adaptability, working at -20 ~ 60 ℃;1064nm, 532nm, 355nm wavelength optional;Typical application;Lidar;Laser micromachining;Nonlinear spectroscopy;Terahertz generation.
532nm Active Q-switched Sub Nanosecond Laser
Optical Parameter
CL532-3mJ-AQNL001 | CL532-5mJ-AQNL002 | CL532-10mJ-AQNL003 | |
Energy @532nm (mJ) | 3 | 5 | 10 |
Energy Stability | <3% | <3% | <3% |
Repeat Frequency (KHz) | 1~10 | 1~5 | 1~5 |
Pulse Width (ns) | <1.5 | <1.5 | <2.5 |
Beam Quality M2 | <2 | <2 | <2 |
Divergence (full angle) (mrad) | <1 | <1 | <1 |
Spot diameter(1/e2)(mm) | ~2 | ~2 | ~4 |
Function Parameter
CL532-3mJ-AQNL001 | CL532-5mJ-AQNL002 | CL532-10mJ-AQNL003 | |
Control Interface | DB9,RS422 | DB9,RS422 | DB9,RS422 |
Cooling Method | Water cooling | Water cooling | Water cooling |
Powered By | 220VAC/50Hz | 220VAC/50Hz | 220VAC/50Hz |
Environmental Requirements
CL532-3mJ-AQNL001 | CL532-5mJ-AQNL002 | CL532-10mJ-AQNL003 | |
Operating Temperature (℃) | 15 ~ 30 | 15 ~ 30 | 15 ~ 30 |
Storage Temperature (℃) | -10 ~ +50 | -10 ~ +50 | -10 ~ +50 |
Humidity | 0-70% | 0-70% | 0-70% |
- Active Q
- Narrow pulse width and high peak power
- High stability and compact structure
- High beam quality
- Laser radar
- Point cloud imaging radar
- Ranging, laser remote sensing
- Photoelectric detection
- Laser fine processing and other fields.
532nm Passive Q-switched Sub Nanosecond Laser
Optical Parameter
CL532-60μJ-PQNL004 | CL532-120μJ-PQNL005 | CL532-200μJ-PQNL006 | |
Energy @532nm (uJ) | 60 | 120 | 200 |
Energy Stability | <3% | <3% | <3% |
Repeat Frequency (Hz) | 1~500 | 1~100 | 1~100 |
Pulse Width (ns) | <1.5 | <1.5 | <1.5 |
Function Parameter
CL532-60μJ-PQNL004 | CL532-120μJ-PQNL005 | CL532-200μJ-PQNL006 | |
Control Interface | DB9,RS422 | DB9,RS422 | DB9,RS422 |
Cooling Method | Air-cooled | Air-cooled | Air-cooled |
Powered By | 220VAC/50Hz | 220VAC/50Hz | 220VAC/50Hz |
Output Power (W) | <50 | <80 | <100 |
Environmental Requirements
CL532-60μJ-PQNL004 | CL532-120μJ-PQNL005 | CL532-200μJ-PQNL006 | |
Operating Temperature (℃) | 15 ~ 40 | 15 ~ 40 | 15 ~ 40 |
Storage Temperature (℃) | -5 ~ +60 | -5 ~ +60 | -5 ~ +60 |
Humidity | 0-70% | 0-70% | 0-70% |
Weight and Size
CL532-60μJ-PQNL004 | CL532-120μJ-PQNL005 | CL532-200μJ-PQNL006 | |
Laser Weight (Kg) | <10 | <12 | <10 |
Laser Size (mm) | 441*117*96 | 480*120*96 | 441*117*96 |
- Widely used in laser radar
- point cloud imaging radar,
- ranging, laser remote sensing
- photoelectric detection
- laser fine processing and other fields
- Seed source
- Laser micromachining
- Non-linear optical measurement
- Laser-induced fluorescence
- Laser ionization mass spectrometry
- Fluorescence lifetime measurement