Cr: ZnSe
Cr:ZnSe crystal case (1)
Size: 2×4×5 mm;
Optically polished sides: 2*4 mm facets (two sides)
Cr: ZnSe laser crystal has the advantages of normally no excited state absorption and upper level conversion, an extremely broad absorption band and large emission cross-section, superb fluorescence quantum efficiency at room temperature and extra broad emission width as well as good chemical and mechanical properties, which make it become an excellent source of efficient and powerful tunable mid infrared laser. Because of mid infrared wavelength band is the window of atmosphere, the Cr: ZnSe laser crystal has important application prospect in the field of photo-communication, pollution gas detection, industrial combustion product test and so on.
- Broad tunability (lasing from 2.1-3.1 μm)
- Broad absorption bands
- Large gain cross section (σemission ~ 9 × 10-19 cm2)
- Minimal problem of excited state absorption (no spin-allowed excited state transitions from the upper laser level)
- High thermal conductivity − better than YAG (18 W/m·K in ZnSe versus 13 W/m·K in YAG)
- High IR (0.6-20 μm) transparency
- Surgery
- Remote sensing
- Dentistry
- Free space communications
- Military applications
Pulsed laser operation of diffusion-doped Cr2+:ZnSe Optics Communications,Volume 167, Issues 1–6,49999,Pages 129-132 |
Reparative effect of diffusion process on host defects in Cr2+ doped ZnS/ZnSe Journal of Alloys and Compounds,Volume 597,50014,Pages 124-128 |
Spectroscopy and laser characteristics of Cr2+-doped chalcogenide crystals — overview and recent results Journal of Alloys and Compounds,Volume 341, Issues 1–2,50002,Pages 28-33 |
Synthesis and characterization of diffusion-doped Cr2+:ZnSe and Fe2+:ZnSe Optical Materials,Volume 28, Issue 3,50006,Pages 231-240 |
The effects of the impurity distribution on the electrical and optical properties of Cr2+:ZnSe nanowires: First-principles study Results in Physics,Volume 8,50018,Pages 628-632 |
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Comparison of the optical properties of diffusion-doped polycrystalline Cr:ZnSe and Cr:CdTe windows Journal of Crystal Growth,Volume 287, Issue 2,50006,Pages 450-453 |
Concentration dependence of fluorescence and lasing efficiency in Cr2+:ZnSe lasers Optical Materials,Volume 29, Issue 6,50007,Pages 703-708 |
Continuous-wave broadly tunable Cr2+:ZnSe laser pumped by a thulium fiber laser Optics Communications,Volume 268, Issue 1,50006,Pages 115-120 |
Double Q-switch Ho:Sc2SiO5 laser by acousto-optic modulator combined with Cr2+:ZnSe saturable absorber Optics & Laser Technology,Volume 98,50018,Pages 19-22 |
Impurity–host interactions in Cr-substituted ZnSe Solid State Communications,Volume 143, Issues 8–9,50007,Pages 399-402 |
Middle-infrared random lasing of Cr2+ doped ZnSe, ZnS, CdSe powders, powders imbedded in polymer liquid solutions, and polymer films Optics Communications,Volume 282, Issue 10,50009,Pages 2049-2052 |
Optical and EPR spectroscopy of Zn:Cr:ZnSe and Zn:Fe:ZnSe crystals Optical Materials,Volume 37,50014,Pages 262-266 |
Passive Q-switching of the Tm-silica fibre laser near 2μm by a Cr2+:ZnSe saturable absorber crystal Optics Communications,Volume 248, Issues 4–6,50005,Pages 501-508 |
Cr:ZnSe crystals crylink have supplied
Doped: 4(+1.5/-1)x10^18cm^-3
Size: 4x3x11 / 7x5x11 mm
Size: 2x5x9 mm
4 sides polishing
Size: 3x4x9 mm
2 sides polishing
Size: 7x5x11 mm
Doped: 4(+1.5/-1)x10^18cm^-3
Cut:S1&S2:Brewster cut 67.5+/-0.25 deg
Size: 4x3x11 mm
Doped: 4(+1.5/-1)x10^18cm^-3
Cut:S1&S2:Brewster cut 67.5+/-0.25 deg
Parameter
Crystal structure | Cubic |
Poisson Ration | 0.28 |
Thickness/Diameter Tolerance | ±0.05mm |
Orientation Tolerence | < 0.5° |
Surface Flatness | <λ/8@632nm |
Wavefront Distortion | <λ/4@632nm |
Surface Quality | 10-5(MIL-O-13830A) |
Parallel | 30〞 |
Perpendicular | 15ˊ |
Clear Aperture | >90% |
Chamfer | <0.2×45° |
Melting Point | 1520 ºC |
Thermal Expansion Coeff. @20ºC | 1.5×10-6/ºC |
Thermal Conductivity Coeff. @20ºC | 14 W/m/ºK |
Specific Heat | 0.79 J/g K |
Density | 5.27 g/cm³ |
Durability Knoop Hardness | 112 kgf/mm² |
Mohs Hardness | 8.5 |
Young‘s Modulus | 67 GPa |
Modulus of Rupture | 55 MPa |
Orientation | <111>or <100> |
Laser Wavelengths | 2150 – 2600 nm |
Emission Linewidth | <1 nm |
Emission Cross-section (@1064nm) | 9×10-19 cm² |
Intrinsic Loss @1064nm | <0.003 cm-1 |
Refractive Index (n) @ 1650nm | 2.455 |
Thermal Optical Coeff. (dn/dT) @nm | 61×10-6/ºC |